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Transmission electron diffraction pattern from from a segment of an indium gallium nitride (InGaN) nanowire about 50 nanometers in diameter taken with an SEM using the new NIST technique clearly shows a unique pattern associated with crystal diffraction. Bottom: Same pattern but with an overlay showing the crystallographic indexing associated with the atomic structure of the material.
See also www.nist.gov/mml/materials_reliability/ebsd-012412.cfm
Credit: Geiss/NIST
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